24 citations · 40 across the 6 of their papers we have counts for
Showing 2019Show all
3 papers · 1 filter
physics.app-ph2019★ 24 cited
Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs
Ansh, Jeevesh Kumar, Gaurav Sheoran +7
Metal-semiconductor interface is a bottleneck for efficient transport of charge carriers through Transition Metal Dichalcogenide (TMD) based field-effect transistors (FETs). Inject…
physics.app-ph2019
H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors
Ansh, Jeevesh Kumar, Ravi K Mishra +2
Unlike Si, 2-dimensional (2D) Transition Metal Dichalcogenides (TMDs) offer atomically thin channels for carrier transport in FETs. Despite advantages like superior gate control, s…
physics.app-ph2019
Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors
Ansh, J Kumar, R K Mishra +2
One of the major roadblocks for the establishment of 2D semiconductor technology for CMOS integrated circuits is lack of industry scalable doping techniques that lead to 2D FETs wi…