2 citations · 2 across the 3 of their papers we have counts for
4 papers
Electrothermal Transport Induced Material Re Configuration and Performance Degradation of CVD Grown Monolayer MoS2 Transistors
Ansh, Jeevesh Kumar, Gaurav Sheoran +1
We report, for CVD-grown monolayer MoS2, the very first results on temporal degradation of material and device performance under electrical stress. Both low and high field regimes…
Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs
Ansh, Jeevesh Kumar, Gaurav Sheoran +7
Metal-semiconductor interface is a bottleneck for efficient transport of charge carriers through Transition Metal Dichalcogenide (TMD) based field-effect transistors (FETs). Inject…
H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors
Ansh, Jeevesh Kumar, Ravi K Mishra +2
Unlike Si, 2-dimensional (2D) Transition Metal Dichalcogenides (TMDs) offer atomically thin channels for carrier transport in FETs. Despite advantages like superior gate control, s…
Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors
Ansh, J Kumar, R K Mishra +2
One of the major roadblocks for the establishment of 2D semiconductor technology for CMOS integrated circuits is lack of industry scalable doping techniques that lead to 2D FETs wi…