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cond-mat.mes-hall2026
Vanadium doping induced valley asymmetries in WS monolayers
Frederico B. Sousa, Boyang Zheng, Elizabeth Grace Houser +10
Transition metal dichalcogenide (TMD) monolayers offer an innovative platform for encoding and manipulating information through the valley degree of freedom. While unique valley-re…
cond-mat.mtrl-sci2026
Anisotropic Dopant and Strain Architectures in WS Nanocrystals Driven by Growth Kinetics
Frederico B. Sousa, Raphaela de Oliveira, Matheus J. S. Matos +11
Dopant distribution in two-dimensional semiconductors is typically assumed to be stochastic, limiting deterministic defect engineering. Here, we show that non-equilibrium growth ki…