activity
20182020
most citedPBMap: A Path Balancing Technology Mapping Algorithm for Single Flux Quantum Logic Circuits

62 citations · 82 across the 7 of their papers we have counts for

collaborators

9 papers

cs.AR202017 cited

Deep-PowerX: A Deep Learning-Based Framework for Low-Power Approximate Logic Synthesis

Ghasem Pasandi, Mackenzie Peterson, Moises Herrera +2

This paper aims at integrating three powerful techniques namely Deep Learning, Approximate Computing, and Low Power Design into a strategy to optimize logic at the synthesis level.…

quant-ph20202 cited

NISQ+: Boosting quantum computing power by approximating quantum error correction

Adam Holmes, Mohammad Reza Jokar, Ghasem Pasandi +3

Quantum computers are growing in size, and design decisions are being made now that attempt to squeeze more computation out of these machines. In this spirit, we design a method to…

cs.AR2019

Hybrid Cell Assignment and Sizing for Power, Area, Delay Product Optimization of SRAM Arrays

Ghasem Pasandi, Raghav Mehta, Massoud Pedram +1

Memory accounts for a considerable portion of the total power budget and area of digital systems. Furthermore, it is typically the performance bottleneck of the processing units. T…

cs.AR2019

Approximate Logic Synthesis: A Reinforcement Learning-Based Technology Mapping Approach

Ghasem Pasandi, Shahin Nazarian, Massoud Pedram

Approximate Logic Synthesis (ALS) is the process of synthesizing and mapping a given Boolean network to a library of logic cells so that the magnitude/rate of error between outputs…

cs.ET20191 cited

SFQmap: A Technology Mapping Tool for Single Flux Quantum Logic Circuits

Ghasem Pasandi, Alireza Shafaei, Massoud Pedram

Single flux quantum (SFQ) logic is a promising candidate to replace the CMOS logic for high speed and low power applications due to its superiority in providing high performance an…

cs.AR2019

A 256kb 9T Near-Threshold SRAM With 1k Cells per Bit-Line and Enhanced Write and Read Operations

Ghasem Pasandi, Sied Mehdi Fakhraei

In this paper, we present a new 9T SRAM cell that has good write-ability and improves read stability at the same time. Simulation results show that the proposed design increases Re…