From the 1 of 15 linked papers with an AI index.
15 papers
SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
Thomas Van Caekenberghe, Paul Steinacker, Bart Raes +31
The authors fabricate silicon MOS spin qubits using extreme‑ultraviolet (EUV) lithography on 300 mm wafers and demonstrate sub‑nanometer gate control, high uniformity, and gate fid…
Concatenated continuous driving of silicon qubit by amplitude and phase modulation
Takuma Kuno, Takeru Utsugi, Andrew J. Ramsay +22
The rate of coherence loss is lower for a qubit under the Rabi drive than a freely evolving qubit . Building on this principle, concatenated continuous d…
Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Xunyao Luo, Xander Peetroons, Tsung-Yeh Yang +27
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-ph…
Cryogenic piezoelectric effects in thin film strontium titanate devices
Ahmed Khalil, Anja Ulrich, Kamal Brahim +12
Next generation quantum technologies will need to rely on efficient transduction between electrical, optical, and mechanical quantum degrees of freedom to generate large-scale enta…
A current source with metrological precision made on a 300mm silicon MOS process
Nathan Johnson, Stefan Kubicek, Julien Jussot +5
Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The er…
Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry
Petar TomiÄ, Patrick Bütler, Yuze Wu +17
Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fa…