From the 1 of 5 linked papers with an AI index.
5 papers
SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
Thomas Van Caekenberghe, Paul Steinacker, Bart Raes +31
The authors fabricate silicon MOS spin qubits using extreme‑ultraviolet (EUV) lithography on 300 mm wafers and demonstrate sub‑nanometer gate control, high uniformity, and gate fid…
Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays
Arne Loenders, Jacques Van Damme, Clement Godfrin +19
Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness…
Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
I. Fattal, J. Van Damme, B. Raes +14
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly us…
A trilinear quantum dot architecture for semiconductor spin qubits
R. Li, V. Levajac, C. Godfrin +10
Semiconductor quantum dot spin qubits hold significant potential for scaling to millions of qubits for practical quantum computing applications, as their structure highly resembles…
Statistical Analysis of Spurious Dot Formation in SiMOS Single Electron Transistors
Kuan-Chu Chen, Clement Godfrin, George Simion +8
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a d…