125 citations · 146 across the 5 of their papers we have counts for
5 papers
Negative Capacitance Enables FinFET Scaling Beyond 3nm Node
Ming-Yen Kao, Harshit Agarwal, Yu-Hung Liao +6
A comprehensive study of the scaling of negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that the NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm n…
One nanometer HfO-based ferroelectric tunnel junctions on silicon
Suraj S. Cheema, Nirmaan Shanker, Cheng-Hsiang Hsu +4
In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, fer…
Spin-orbit torque generated by amorphous FeSi
Cheng-Hsiang Hsu, Julie Karel, Niklas Roschewsky +5
While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the…
Anomalous Subthreshold Behaviors in Negative Capacitance Transistors
Yu-Hung Liao, Daewoong Kwon, Suraj Cheema +5
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, su…
Spin-Orbit Torques in ferrimagnetic GdFeCo Alloys
Niklas Roschewsky, Tomoya Matsumura, Suraj Cheema +4
The spin-orbit torque switching of ferrimagnetic Gd(FeCo) films was studied for both transition metal (TM)-rich and rare earth (RE)-rich configurations.…