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cond-mat.mes-hall2022
Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF plasma and Al(CH)
Haozhe Wang, Azmain Hossain, David Catherall +1
We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF plasma and trimethylaluminum (Al(CH), TMA). ALE was obser…
physics.app-ph2022★ 1 cited
Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy
Hyunseok Kim, Yunpeng Liu, Kuangye Lu +26
Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer gr…