5 papers
Vertical Gallium Oxide Isolated Source Electrode Field Effect Transistors (ISEFET) Without Planarization or Mid-Gap Acceptor Blocking Layers
Akilesh Srikanth, Md Saklain Morshed, Chandan Joishi +2
We propose and demonstrate the first vertical Gallium oxide device architecture without the use of planarization etch back processes or mid-gap acceptor regions. The Isolated Sourc…
Optimal error bounds on the exponential wave integrator for nonlinear Schrödinger equations with highly singular potential
Weizhu Bao, Chushan Wang, Yifei Wu
We establish error estimates of the first-order exponential wave integrator (EWI) for the nonlinear Schrödinger equation (NLSE) with a highly singular potential in …
Error estimates of an exponential wave integrator for the nonlinear Schrödinger equation with singular potential
Weizhu Bao, Chushan Wang
We analyze a first-order exponential wave integrator (EWI) for the nonlinear Schrödinger equation (NLSE) with a singular potential that is locally in , which might be locally…
Optimal error bounds on an exponential wave integrator Fourier spectral method for the logarithmic Schrödinger equation
Weizhu Bao, Ying Ma, Chushan Wang
We prove a nearly optimal error bound on the exponential wave integrator Fourier spectral (EWI-FS) method for the logarithmic Schrödinger equation (LogSE) under the assumption of…
A robust hybridizable discontinuous Galerkin scheme with harmonic averaging technique for steady state of real-world semiconductor devices
Qingyuan Shi, Yongyong Cai, Chijie Zhuang +4
Solving real-world nonlinear semiconductor device problems modeled by the drift-diffusion equations coupled with the Poisson equation (also known as the Poisson-Nernst-Planck equat…