Shao-Ting Ho

most citedCrystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV

α

-(AlGa)

_{2}

_{3}

on m-plane sapphire

2 citations · 2 across the 1 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2020

N-polar GaN/AlN resonant tunneling diodes

YongJin Cho, Jimy Encomendero, Shao-Ting Ho +2

N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-v…

physics.app-ph2020★ 2 cited

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$ -(AlGa) $_{2}$ O $_{3}$ on m-plane sapphire

Riena Jinno, Celesta S. Chang, Takeyoshi Onuma +9

Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semico…

N-polar GaN/AlN resonant tunneling diodes

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV α-(AlGa)2​O3​ on m-plane sapphire

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$ -(AlGa) $_{2}$ O $_{3}$ on m-plane sapphire