3 papers
physics.app-ph2026
Vertical Gallium Oxide Isolated Source Electrode Field Effect Transistors (ISEFET) Without Planarization or Mid-Gap Acceptor Blocking Layers
Akilesh Srikanth, Md Saklain Morshed, Chandan Joishi +2
We propose and demonstrate the first vertical Gallium oxide device architecture without the use of planarization etch back processes or mid-gap acceptor regions. The Isolated Sourc…
eess.SY2025
Hybrid Parallel Collaborative Simulation Framework Integrating Device Physics with Circuit Dynamics for PDAE-Modeled Power Electronic Equipment
Qingyuan Shi, Chijie Zhuang, Jiapeng Liu +5
Optimizing high-performance power electronic equipment, such as power converters, requires multiscale simulations that incorporate the physics of power semiconductor devices and th…
math.NA2024
A robust hybridizable discontinuous Galerkin scheme with harmonic averaging technique for steady state of real-world semiconductor devices
Qingyuan Shi, Yongyong Cai, Chijie Zhuang +4
Solving real-world nonlinear semiconductor device problems modeled by the drift-diffusion equations coupled with the Poisson equation (also known as the Poisson-Nernst-Planck equat…