4 papers
Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes
Richard Monflier, Richard Daubriac, Mahmoud Haned +9
For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and hi…
Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers
Y. Baron, J. L. Lábár, S. Lequien +8
We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavi…
Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A
Mohamed Ali Khaled, Leonardo Cancellara, Salima Fekraoui +8
Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the…
Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation
Damiano Ricciarelli, Jonas Müller, Guilhem Larrieu +11
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semicon…