activity
20132025
most citedDisorder-induced electron and hole trapping in amorphous TiO2

29 citations · 36 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2025

Structural transformation for BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) induced by an in-situ Molecular Beam Epitaxy cooldown process

Islam Ahmed, Olivier Richard, Partrick Carolan +5

Oxygen loss is one of the common defect types in perovskite oxides whose formation can be caused by a low oxygen background pressure during growth or by straining the thin film. Cr…

cond-mat.mtrl-sci2024

Ferrimagnetism induced by thermal vibrations in oxygen-deficient manganite heterostructures

Moloud Kaviani, Chiara Ricca, Ulrich Aschauer

Super-exchange most often leads to antiferromagnetim in transition-metal perovskite oxides, yet ferromagnetism or ferrimagnetism would be preferred for many applications, for examp…

cond-mat.mtrl-sci2021★ 7 cited

Surface and interface effects in oxygen deficient SrMnO thin films grown on SrTiO

Moloud Kaviani, Ulrich Aschauer

Complex oxide functionality, such as ferroelectricity, magnetism or superconductivity is often achieved in epitaxial thin-film geometries. Oxygen vacancies tend to be the dominant…

cond-mat.mtrl-sci2020★ 29 cited

Disorder-induced electron and hole trapping in amorphous TiO2

David Mora-Fonz, Moloud Kaviani, Alexander L. Shluger

Thin films of amorphous (a)-TiO2 are ubiquitous as photocatalysts, protective coatings, photoanodes and in memory application, where they are exposed to excess electrons and holes.…

cond-mat.mtrl-sci2013

Calculation ofthe transitions and migration of nitrogen and vacancy related defects,with implications on the formation of NV centers in bulk diamond

Peter Deák, Bálint Aradi, Moloud Kaviani +2

Formation and excitation energies as well charge transition levels, are determined forthe substitutional nitrogen (Ns),the vacancy (V) and related point defects (NV, NVH, N2, N2V a…