16 citations · 45 across the 8 of their papers we have counts for
8 papers
Near-half-metallic state in the half Heusler PtMnSb film on a III-V substrate
Shinichi Nishihaya, Malcolm J. A. Jardine, Hadass S. Inbar +9
The interplay between half-metallic ferromagnetism and spin-orbit coupling within the inversion symmetry-broken structure of half Heuslers provides an ideal platform for various sp…
Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications
Anthony McFadden, Aranya Goswami, Tongyu Zhao +7
Increasing the density of superconducting circuits requires compact components, however, superconductor-based capacitors typically perform worse as dimensions are reduced due to lo…
Sn/InAs Josephson junctions on selective area grown nanowires with in-situ shadowed superconductor evaporation
Aranya Goswami, Sanchayeta R. Mudi, Connor Dempsey +5
Superconductor-semiconductor nanowire hybrid structures are useful in fabricating devices for quantum information processing. While selective area growth (SAG) offers the flexibili…
Towards merged-element transmons using silicon fins: the FinMET
Aranya Goswami, Anthony P. McFadden, Tongyu Zhao +7
A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology…
Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb
Shouvik Chatterjee, Felipe Crasto de Lima, John A. Logan +18
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topolo…
Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
Anthony McFadden, Aranya Goswami, Michael Seas +4
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/A…
Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy
Shouvik Chatterjee, Shoaib Khalid, Hadass S. Inbar +7
Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuS…
Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films
Shouvik Chatterjee, Shoaib Khalid, Hadass S. Inbar +10
Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a com…