65 citations · 200 across the 8 of their papers we have counts for
4 papers · 1 filter
Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals
Rujun Sun, Yu Kee Ooi, Arkka Bhattacharyya +4
Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionall…
On the origin of red luminescence from iron-doped beta-Ga2O3 bulk crystals
Rujun Sun, Yu Kee Ooi, Peter T. Dickens +2
Currently, Fe doping in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features…
Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping
Muad Saleh, Joel B. Varley, Jani Jesenovec +4
N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta…
Schottky Barrier Height Engineering In -GaO Using SiO Interlayer Dielectric
Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh +4
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of -GaO by insertion of an ultra-thin SiO dielectric interlaye…