collaborators

1 paper

cond-mat2001

One-Parameter Scaling of the Conductivity of Si:B: A Temperature-Independent Variable-Range Hopping Prefactor

M. P. Sarachik, P. Dai

For insulating Si:B with dopant concentrations from 0.75 n_c to the critical concentration n_c, the conductivity ranging over five orders of magnitude collapses using a single scal…