Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS${}_2$

E. Cappelluti, R. Roldán, J. A. Silva-Guillén +2

In this paper we present a paradigmatic tight-binding model for single-layer as well as for multi-layered semiconducting MoS${}_2$ and similar transition metal dichalcogenides. We sh…