6 citations · 11 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2021★ 5 cited
An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory
D. Tjeertes, A. Vela, T. J. F. Verstijnen +6
Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. Th…
cond-mat.mes-hall2020★ 6 cited
N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy
D. Tjeertes, T. J. F. Verstijnen, A. Gonzalo +10
Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-…