Vertical Gallium Oxide Isolated Source Electrode Field Effect Transistors (ISEFET) Without Planarization or Mid-Gap Acceptor Blocking Layers

Akilesh Srikanth, Md Saklain Morshed, Chandan Joishi +2

We propose and demonstrate the first vertical Gallium oxide device architecture without the use of planarization etch back processes or mid-gap acceptor regions. The Isolated Sourc…