93 citations · 102 across the 4 of their papers we have counts for
5 papers
Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations
Ying-Chuan Chen, Yu-Ting Chao, Edward Chen +2
Resistive memory based on 2D WS2, MoS2, and h-BN materials has been studied, including experiments and simulations. The influences with different active layer thicknesses have been…
Image-Force Barrier Lowering of Schottky Barriers in Two-Dimensional Materials as a Function of Metal Contact Angle
Sarah R. Evans, Emeric Deylgat, Edward Chen +1
Two-dimensional (2D) semiconductors are a promising solution for the miniaturization of electronic devices and for the exploration of novel physics. However, practical applications…
Top-Gated Carbon Nanotube FETs from Quantum Simulations: Comparison with Experiments
Alfonso Sanchez-Soares, Thomas Kelly, Giorgos Fagas +2
We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15…
Monte Carlo analysis of phosphorene nanotransistors
Gautam Gaddemane, Maarten L. Van de Put, William G. Vandenberghe +2
Experimental studies on two-dimensional (2D) materials are still in the early stages, and most of the theoretical studies performed to screen these materials are limited to the roo…
Theoretical studies of electronic transport in mono- and bi-layer phosphorene: A critical overview
Gautam Gaddemane, William G. Vandenberghe, Maarten L. Van de Put +4
Recent theoretical calculations of the electrical performance of several two-dimensional materials predict a low-field carrier mobility that spans several orde…