J. McCandless

activity

20192023

most citedAdsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

80 citations · 139 across the 8 of their papers we have counts for

collaborators

8 papers

physics.app-ph2023

Accumulation and removal of Si impurities on $β - G a_{2} O_{3}$ arising from ambient air exposure

J. P. McCandless, C. A. Gorsak, V. Protasenko +5

Here we report that the source of Si impurities commonly observed on (010) $β - G a_{2} O_{3}$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment…

cond-mat.mtrl-sci2023★ 15 cited

Growth of $α - G a_{2} O_{3}$ on $A l_{2} O_{3}$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

J. P. McCandless, D. Rowe, N. Pieczulewski +8

We report the growth of $α - G a_{2} O_{3}$ on $m$ -plane $A l_{2} O_{3}$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We…

cond-mat.mtrl-sci2022

Silicon-doped $β$ -Ga $_{2}$ O $_{3}$ films grown at 1 $μ$ m/h by suboxide molecular-beam epitaxy

Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$ -Ga $_{2}$ O $_{3}$ at a growth rate of ~1 $μ$ m/h with control of the silicon doping concentration from 5x10 $^{16}$ …

cond-mat.mtrl-sci2021

Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy

Patrick Vogt, Felix V. E. Hensling, Kathy Azizie +7

We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy ( $S$ -MBE). By supplying the molecular catalysts In $_{2}$ O and SnO we…

cond-mat.mtrl-sci2021★ 12 cited

Ultrafast Dynamics of Gallium Vacancy Charge States in $β$ -Ga $_{2}$ O $_{3}$

Arjan Singh, Okan Koksal, Nicholas Tanen +6

Point defects in crystalline materials often occur in multiple charge states. Although many experimental methods to study and explore point defects are available, techniques to exp…

cond-mat.mtrl-sci2020★ 80 cited

Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

Patrick Vogt, Felix V. E. Hensling, Kathy Azizie +15

This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per…

physics.app-ph2020

Intra- and Inter-Conduction Band Optical Absorption Processes in $β$ -Ga $_{2}$ O $_{3}$

Arjan Singh, Okan Koksal, Nicholas Tanen +6

$β$ -Ga $_{2}$ O $_{3}$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to t…

physics.app-ph2019★ 32 cited

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Zhe Cheng, Nicholas Tanen, Celesta Chang +6

Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable subst…

Accumulation and removal of Si impurities on β−Ga2​O3​ arising from ambient air exposure

Growth of α−Ga2​O3​ on Al2​O3​ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

Silicon-doped β-Ga2​O3​ films grown at 1 μm/h by suboxide molecular-beam epitaxy