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cond-mat.mtrl-sci2020
Evidence of hydrogen diffusion in n-type GaN
Rafal Jakiela, Adam Barcz
The control over impurities like hydrogen and oxygen is of key importance in nitride-based semiconducting due to their unrivaled applicability in optoelectronics and high power/hig…
cond-mat.mtrl-sci2020
Diffusion of Be in gallium nitride: Experiment and modelling
Rafał Jakieła, Kacper Sierakowski, Tomasz Sochacki +4
Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted i…