30 citations · 53 across the 5 of their papers we have counts for
4 papers · 1 filter
Evidence of hydrogen diffusion in n-type GaN
Rafal Jakiela, Adam Barcz
The control over impurities like hydrogen and oxygen is of key importance in nitride-based semiconducting due to their unrivaled applicability in optoelectronics and high power/hig…
Diffusion of Be in gallium nitride: Experiment and modelling
Rafał Jakieła, Kacper Sierakowski, Tomasz Sochacki +4
Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted i…
Diffusion of Mn in gallium nitride: Experiment and modelling
Rafal Jakiela, Katarzyna Gas, Maciej Sawicki +1
The control over the structural homogeneity is of paramount importance for ternary nitride compounds - the second most important semiconducting material-class after Si, due to its…
New evidence for structural and magnetic properties of GaAs:(Mn,Ga)As granular layers
J. Bak-Misiuk, K. Lawniczak-Jablonska, E. Dynowska +12
Structural and magnetic properties of GaAs thin films with embedded MnAs nanoclusters were investigated as function of the annealing temperature and layers composition. The presenc…