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physics.app-ph2020
Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth
Dmitrii V. Viazmitinov, Yury Berdnikov, Shima Kadkhodazadeh +7
We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our…
physics.app-ph2019
Tunable MEMS VCSEL on Silicon substrate
Hitesh Kumar Sahoo, Thor Ansbæk, Luisa Ottaviano +4
We present design, fabrication and characterization of a MEMS VCSEL which utilizes a silicon-on-insulator wafer for the microelectromechanical system and encapsulates the MEMS by d…
physics.app-ph2018
Comparison of processing-induced deformations of InP bonded to Si determined by e-beam metrology: direct vs. adhesive bonding
Aurimas Sakanas, Elizaveta Semenova, Luisa Ottaviano +2
In this paper, we employ an electron beam writer as metrology tool to investigate distortion of an exposed pattern of alignment marks in heterogeneously bonded InP on silicon. Afte…