27 citations · 28 across the 2 of their papers we have counts for
2 papers
physics.app-ph2021★ 27 cited
Enhanced photogalvanic effect in the two-dimensional MgCl/ZnBr vertical heterojunction by inhomogenous tensile stress
Liyu Qian, Juan Zhao, Yiqun Xie
The photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of a dc photocurrent at zero bias with a high polarization sensitivity, which makes…
physics.app-ph2020★ 1 cited
Largely enhanced photogalvanic effects in the phosphorene photodetector by strain-increased device asymmetry
Juan Zhao, Yibin Hu, Yiqun Xie +2
Photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of the open-circuit voltage that is much larger than the bandgap, making it rather attra…