46 citations · 254 across the 23 of their papers we have counts for
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cond-mat.mes-hall2025
Highly efficient field-free switching by orbital Hall torque in a MoS2-based device operating at room temperature
Antonio Bianco, Michele Ceccardi, Raimondo Cecchini +6
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a…
cond-mat.mes-hall2024★ 3 cited
Role of Disorder in Third-order Anomalous Hall Effect in Time-reversal Symmetric Systems
Chanchal K. Barman, Arghya Chattopadhyay, Surajit Sarkar +2
The third-order anomalous Hall effect (TOAHE) driven by Berry connection polarizability in Dirac materials offers a promising avenue for exploring quantum geometric phenomena. We i…