20 citations · 38 across the 7 of their papers we have counts for
7 papers
Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime
Meiling Zhang, Jean-Marie Poumirol, Nicolas Chery +13
Using Localized Surface Plasmon Resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a sil…
Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure
Ziqi Zhou, Paul Marcon, Xavier Devaux +18
Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) w…
Structural, chemical and optical characterizations of nanocrystallized AlN:Er thin films prepared by r.f. magnetron sputtering
Valerie Brien, P. Miska, H. Rinnert +2
Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 m IR photo…
Optical characterization of nanocrystallized AlN:Er films prepared by magnetron sputtering
Valerie Brien, Manuel Dossot, Hervé Rinnert +3
In the prospect of understanding the photoluminescence mechanisms of AlN films doped with erbium and targeting photonic applications we have synthesized non doped and Er-doped AlN…
Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field
Alaa E. Giba, Xue Gao, Mathieu Stoffel +10
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electrolumine…
Influence of the magnetron power on the Er-related photoluminescence of AlN:Er films prepared by magnetron sputtering
Syed Sajjad Hussain, Valerie Brien, Hervé Rinnert +1
The effect of magnetron power on the room temperature 1.54 m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studie…
Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering
H. Rinnert, S. S. Hussain, Valerie Brien +1
Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples sh…