Evolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss

R K Bommali, S Ghosh, Harsh Gupta +2

Amorphous hydrogenated silicon nitride ($\text{a}$-SiN${}_{\text{x}}$:H) thin films irradiated with 100 MeV Ni${}^{7+}$ results in the formation of continuous ion track stru…