most citedInfluence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers

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cond-mat.mtrl-sci200520 cited

Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers

V. Stanciu, O. Wilhelmsson, U. Bexell +5

The influence of annealing parameters - temperature and time - on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the…

cond-mat.mtrl-sci2005

Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers

J. Sadowski, M. Adell, J. Kanski +6

Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was suppli…

cond-mat.mtrl-sci2004

Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers

V. Osinniy, K. Dybko, A. Jedrzejczak +8

Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015<x<0.06…

cond-mat.mtrl-sci2004

Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As

T. Figielski, T. Wosinski, O. Pelya +6

We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak…

cond-mat.mtrl-sci2004

MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure

B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +5

Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in si…