Quantitative Modeling of Point Defects in ${\hat{I}}^2$-Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics

Khandakar Aaditta Arnab, Megan Stephens, Isaac Maxfield +5

B-gallium oxide (B-Ga2O3) is of high interest for power electronics because of its unique combination of melt growth, epitaxial growth, n-type dopability, ultrawide bandgap, and hi…