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physics.app-ph2026
High Performance 4H-SiC Optically Controlled MOS Transistor
Sitian Chen, Ziqian Tian, Guoliang Zhang +7
This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent…
physics.app-ph2022★ 7 cited
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Cunzhi Sun, Cheng Xiang, Rongdun Hong +4
Strong Fermi level pinning (FLP) - often attributed to metal-induced gap states at the interfacial contacts - severely reduces the tunability of the Schottky barrier height of the…