9 citations · 10 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025★ 9 cited
Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
Asir Intisar Khan, Jeong-Kyu Kim, Urmita Sikder +5
For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used…
physics.app-ph2020★ 1 cited
UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction
Swanand V. Solanke, Rohith Soman, Muralidharan Rangarajan +2
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating α-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOC…