8 citations · 8 across the 1 of their papers we have counts for
2 papers
physics.app-ph2021
Design of Ga2O3 Modulation Doped Field Effect Transistors
Michael Mastro, Marko J. Tadjer, Jihyun Kim +2
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron…
physics.app-ph2020★ 8 cited
Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices
M. A. Mastro, J. K. Hite, C. R. Eddy +4
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epit…