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Moiré exciton polaron engineering via twisted hBN
Minhyun Cho, Biswajit Datta, Kwanghee Han +11
Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moiré superlattices with alternating AB and BA domains. These domains possess elec…
Moiré flat bands and antiferroelectric domains in lattice relaxed twisted bilayer hexagonal boron nitride under perpendicular electric fields
Fengping Li, Dongkyu Lee, Nicolas Leconte +2
Local interlayer charge polarization of twisted bilayer hexagonal boron nitride (t2BN) is calculated and parametrized as a function of twist angle and perpendicular electric fields…
Ab initio tight-binding Models for Mono- and Bilayer Hexagonal Boron Nitride (h-BN)
Srivani Javvaji, Fengping Li, Jeil Jung
Hexagonal boron nitride (-BN) exhibits dominant -bands near the Fermi level, similar to graphene. However, unlike graphene, where tight-binding (TB) models accurately rep…
Reversible optical data storage below the diffraction limit
Richard Monge, Tom Delord, Carlos A. Meriles
Color centers in wide-bandgap semiconductors feature metastable charge states that can be interconverted with the help of optical excitation at select wavelengths. The distinct flu…