activity
20192025
most citedA measurement of the Higgs boson mass in the diphoton decay channel

170 citations · 1.7k across the 59 of their papers we have counts for

collaborators
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13 papers · 1 filter

physics.ins-det2025

Transient studies using a TCAD and Allpix Squared combination approach

Manuel A. Del Rio Viera, Eric Buschmann, Ankur Chauhan +22

The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density an…

physics.ins-det2024

4D-Tracking with Digital SiPMs

Inge Diehl, Finn Feindt, Ingrid-Maria Gregor +6

Silicon Photomultipliers (SiPMs) are the state-of-the-art technology in single-photon detection with solid-state detectors. Single Photon Avalanche Diodes (SPADs), the key element…

physics.ins-det2024★ 7 cited

Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles

Håkan Wennlöf, Dominik Dannheim, Manuel Del Rio Viera +17

The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electro…

physics.ins-det2024

Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Gianluca Aglieri Rinella, Giacomo Alocco, Matias Antonelli +91

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise…

physics.ins-det2024★ 4 cited

Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology

Adriana Simancas, Justus Braach, Eric Buschmann +22

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collecti…

physics.ins-det2024★ 7 cited

The DESY Digital Silicon Photomultiplier: Device Characteristics and First Test-Beam Results

Finn Feindt, Inge Diehl, Karsten Hansen +6

Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optica…

physics.ins-det2023

Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70m pixel pitch

I. Diehl, K. Hansen, T. Vanat +4

This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 3232 pixel m…

physics.ins-det2023

Evaluation of Planar Silicon Pixel Sensors with the RD53A Readout Chip for the Phase-2 Upgrade of the CMS Inner Tracker

The Tracker Group of the CMS Collaboration

The Large Hadron Collider (LHC) at CERN will undergo an upgrade in order to increase its luminosity to cms. The increased luminosity during this…

physics.ins-det2023★ 2 cited

Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors

Adriana Simancas, Justus Braach, Eric Buschmann +21

Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in par…

physics.ins-det2022★ 5 cited

Towards a New Generation of Monolithic Active Pixel Sensors

Ankur Chauhan, Manuel Del Rio Viera, Doris Eckstein +16

A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, mor…

physics.ins-det2022★ 6 cited

The Tangerine project: Development of high-resolution 65 nm silicon MAPS

Håkan Wennlöf, Ankur Chauhan, Manuel Del Rio Viera +16

The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a…

physics.ins-det2021

Position resolution with 25 um pitch pixel sensors before and after irradiation

I. Zoi, A. Ebrahimi, F. Feindt +7

Pixelated silicon detectors are state-of-the-art technology to achieve precise tracking and vertexing at collider experiments, designed to accurately measure the hit position of in…

physics.ins-det2019★ 8 cited

Influence of radiation damage on the absorption of near-infrared light in silicon

C. Scharf, F. Feindt, R. Klanner

The absorption length, , of light with wavelengths between 0.95 and 1.30m in silicon irradiated with 24GeV/c protons to 1MeV neutron equivalent fluences between…