activity
20162020
most citedRobust memristors based on layered two-dimensional materials

803 citations · 1.2k across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2020★ 7 cited

Giant Polarization and Abnormal Flexural Deformation in Bent Freestanding Perovskite Oxides

Songhua Cai, Yingzhuo Lun, Dianxiang Ji +15

Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric…

physics.app-ph2019★ 1 cited

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Weisheng Li, Jian Zhou, Songhua Cai +21

Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-qua…

cond-mat.mtrl-sci2018★ 42 cited

Direct demonstration of the emergent magnetism resulting from the multivalence Mn in a LaMnO3 epitaxial thin film system

Wei Niu, Wenqing Liu, Min Gu +14

Atomically engineered oxide heterostructures provide a fertile ground for creating novel states. For example, a two-dimensional electron gas at the interface between two oxide insu…

cond-mat.supr-con2018★ 108 cited

Gate-Induced Interfacial Superconductivity in 1T-SnSe2

Junwen Zeng, Erfu Liu, Yajun Fu +16

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In…

cond-mat.mtrl-sci2018★ 803 cited

Robust memristors based on layered two-dimensional materials

Miao Wang, Songhua Cai, Chen Pan +11

Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining s…

cond-mat.mes-hall2016★ 273 cited

Probing Carrier Transport and Structure-property Relationship of Highly Ordered Organic Semiconductors at Two-dimensional Limit

Yuhan Zhang, Jingsi Qiao, Si Gao +14

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the…