54 citations · 262 across the 16 of their papers we have counts for
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Vector beam generation from standing hollow GaN nanowire lasers on sapphire substrate
Masato Takiguchi, Sylvain Sergent, Benjamin Damilano +9
We fabricated GaN based hollow nanowires standing upright on a sapphire substrate by the sublimation method and found that they exhibit laser oscillation at room temperature. These…
Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion
Benjamin Damilano, Rémi Aristégui, Henryk Teisseyre +8
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the pho…
Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layered graphene and nickel/gold films
R. Aristegui, P. Lefebvre, C. Brimont +9
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. T…