54 citations · 262 across the 16 of their papers we have counts for
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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion
Benjamin Damilano, Rémi Aristégui, Henryk Teisseyre +8
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the pho…
AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
Stéphane Vézian, Benjamin Damilano, Franck Natali +2
An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found th…
Highly resistive epitaxial Mg-doped GdN thin films
C. -M. Lee, H. Warring, S. Vézian +7
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier con…