most citedUnderstanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

37 citations · 71 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2020★ 34 cited

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo +4

In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the cha…