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cond-mat.mtrl-sci2021
Strong In-plane Anisotropy in the Electronic Properties of Doped Transition Metal Dichalcogenides exhibited in W1-xNbxS2
Siow Mean Loh, Xue Xia, Neil R. Wilson +1
In this work, we study the electronic properties of monolayer transition metal dichalcogenide materials subjected to aliovalent doping, using Nb-doped WS2 as an exemplar. Scanning…
cond-mat.mtrl-sci2019★ 102 cited
Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
Matthew Hamer, Johanna Zultak, Anastasia V. Tyurnina +16
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of the…