177 citations · 394 across the 12 of their papers we have counts for
12 papers
Plasmon triggered ultrafast operation of color centers in hBN layers
Vasilios Karanikolas, Takuya Iwasaki, Joel Henzie +6
High-quality emission centers in two-dimensional materials are promising components for future photonic and optoelectronic applications. Carbon-enriched hexagonal boron nitride (hB…
Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields
Takuya Iwasaki, Motoi Kimata, Yoshifumi Morita +7
Employing graphene as a template, we fabricate moiré superlattices by stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and hexagonal boron nitride (hBN), i.e., hB…
ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory
Bablu Mukherjee, Ryoma Hayakawa, Kenji Watanabe +3
We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic…
Substrate-Independent Growth of Atomically Precise Chiral Graphene Nanoribbons
Dimas G. de Oteyza, Aran Garcia-Lekue, Manuel Vilas-Varela +10
Contributing to the need of new graphene nanoribbon (GNR) structures that can be synthesized with atomic precision, we have designed a reactant that renders chiral (3,1) - GNRs aft…
Light-Assisted and Gate-Tunable Oxygen Gas Sensor based on Rhenium Disulfide (ReS2) Field-Effect Transistors
Amir Zulkefli, Bablu Mukherjee, Ryoma Hayakawa +3
Gas sensors based on transition metal dichalcogenides (TMDCs) have attracted much attention from a new perspective involving light-assisted or gate-voltage operation. However, thei…
Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-layer-ReS2/h-BN/Graphene Heterostructures
Bablu Mukherjee, Amir Zulkefli, Kenji Watanabe +3
Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (…
MoS2 thin-film transistors spin-states, of conduction electrons and vacancies, distinguished by operando electron spin resonance
Naho Tsunetomo, Shohei Iguchi, Małgorzata Wierzbowska +6
Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the cryst…
Single-Carrier Transport in Graphene/hBN Superlattices
Takuya Iwasaki, Shu Nakaharai, Yutaka Wakayama +4
Graphene/hexagonal boron nitride (hBN) moiré superlattices have attracted interest for use in the study of many-body effects and fractal physics in Dirac fermion systems. Many exot…
Topological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices
Kosuke Endo, Katsuyoshi Komatsu, Takuya Iwasaki +8
Graphene superlattices have recently been attracting growing interest as an emergent class of quantum metamaterials. In this paper, we report the observation of nonlocal transport…
Fabry-Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts
Nurul Fariha Ahmad, Katsuyoshi Komatsu, Takuya Iwasaki +8
We report on the observation of quantum transport and interference in a graphene device that is attached with a pair of split gates to form an electrostatically-defined quantum poi…
Observation of superconductivity in bilayer graphene/hexagonal boron nitride superlattices
Satoshi Moriyama, Yoshifumi Morita, Katsuyoshi Komatsu +9
A class of low-dimensional superconductivity (SC), such as most of "atomic-layer" SCs, has survived only under certain circumstances, implying a role of the substrate. Moreover, in…
Origin of negative differential resistance in molecular junctions of Rose Bengal
Anirban Bandyopadhyay, Y. Wakayama
Negative differential resistance (NDR) is tuned at junctions of electronically different dimer and trimer of Rose Bengal on an atomic flat gold (111) surface. Isolated molecule did…