collaborators

6 papers

physics.optics2020

Super interference fringes of two-photon photoluminescence in individual Au nanoparticles: the critical role of the intermediate state

Yao Li, Yonggang Yang, Chengbing Qin +7

The interaction between light and metal nanoparticles enables investigations of microscopic phenomena on nanometer length and ultrashort time scales, benefiting from strong confine…

cond-mat.mes-hall2020

Reversible engineering the spin-orbit coupling of monolayer MoS2 via laser irradiation under controlled gas atmospheres

Liang Xilong, Qin Chengbing, Gao Yan +6

Monolayer transition metal dichalcogenides (TMDs) with strong spin-orbit coupling combined with broken inversion symmetry, leading to a coupling of spin and valley degrees of freed…

cond-mat.mtrl-sci2020

Giant Enhancement of Photoluminescence Emission in Monolayer WS2 by Femtosecond Laser Irradiation

Qin Chengbing, Liang Xilong, Han Shuangping +5

Monolayer transition metal dichalcogenides have emerged as promising materials for optoelectronic and nanophotonic devices. However, the low photoluminescence (PL) quantum yield (Q…

cond-mat.mtrl-sci2019

All-optical reversible manipulation of exciton and trion emissions in monolayer WS2

Chaoli Yang, Yan Gao, Chengbing Qin +7

Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors emerging promising applications in diverse optoelectronic devices. To improve performance, recent in…

cond-mat.mes-hall2019

Excitonic Transport and Intervalley Scattering in Exfoliated MoSe2 Monolayer Revealed by Four-Wave-Mixing Transient Grating Spectroscopy

Henning Kuhn, Julian Wagner, Shuangping Han +5

Exciton intervalley scattering, annihilation and relaxation dynamics, and diffusive transport in a monolayer transition metal dichalcogenides are central to the functionality of de…

cond-mat.mtrl-sci2019

Incoherent phonon population and exciton-exciton annihilation in monolayer WS2 revealed by time-resolved spontaneous Raman scattering

Shuangping Han, Christoph Boguschewski, Yan Gao +3

Atomically thin layer transition metal dichalcogenides have been intensively investigated for their rich optical properties and potential applications in nano-electronics. In this…