270 citations · 444 across the 10 of their papers we have counts for
10 papers
Vertically Integrated Dual-memtransistor Enabled Reconfigurable Heterosynaptic Sensorimotor Networks and In-memory Neuromorphic Computing
Srilagna Sahoo, Abin Varghese, Aniket Sadashiva +4
Neuromorphic in-memory computing requires area-efficient architecture for seamless and low latency parallel processing of large volumes of data. Here, we report a compact, vertical…
An electroplating-based plasmonic platform for giant emission enhancement in monolayer semiconductors
Abhay Anand V S, Mihir Kumar Sahoo, Faiha Mujeeb +4
Two dimensional semiconductors have attracted considerable attention owing to their exceptional electronic and optical characteristics. However, their practical application has bee…
Electrically Controlled Reversible Strain Modulation in MoS Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film
Abin Varghese, Adityanarayan Pandey, Pooja Sharma +3
Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible…
Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS Heterostructure
Himani Jawa, Sayantan Ghosh, Abin Varghese +2
Layered two-dimensional van der Waals (vdW) semiconductors and their heterostructures have been shown to exhibit positive photoconductance (PPC) in many studies. A few recent repor…
Near-Infrared and Visible-range Optoelectronics in 2D Hybrid Perovskite/Transition Metal Dichalcogenide Heterostructures
Abin Varghese, Yuefeng Yin, Mingchao Wang +2
The application of ultrathin two-dimensional (2D) perovskites in near-infrared and visible-range optoelectronics has been limited owing to their inherent wide bandgaps, large excit…
Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction
Sushovan Dhara, Himani Jawa, Sayantan Ghosh +2
Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homo…
Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS FETs
Himani Jawa, Abin Varghese, Saurabh Lodha
Clockwise to anti-clockwise hysteresis crossover in current-voltage transfer characteristics of field effect transistors (FETs) with graphene and MoS channels holds significant…
Near-direct bandgap / type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics
Abin Varghese, Dipankar Saha, Kartikey Thakar +5
PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a dire…
Stable and scalable metallic phase on MoS2 using forming-gas microwave plasma
Chithra H. Sharma, Ananthu P. Surendran, Abin Varghese +1
Monolithic realization of metallic 1T and semiconducting 2H polymorphic phases makes MoS2 a potential candidate for future microelectronic circuits. Though co-existence of these ph…
Topography preserved microwave plasma etching for top-down layer engineering in MoS2 and other van der Waals materials
Abin Varghese, Chithra H. Sharma and, Madhu Thalakulam
A generic and universal layer engineering strategy for van der Waals (vW) materials, scalable and compatible with the current semiconductor technology is of paramout importance in…