3 citations · 7 across the 5 of their papers we have counts for
5 papers
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Justin Rudie, Huong Tran, Yang Zhang +10
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum w…
Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Justin Rudie, Xiaoxin Wang, Rajesh Kumar +9
GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) struct…
Monolithic Germanium Tin on Si Avalanche Photodiodes
Justin Rudie, Sylvester Amoah, Xiaoxin Wang +8
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to…
Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K
Yiyin Zhou, Solomon Ojo, Yuanhao Miao +15
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant prog…
Electrically injected GeSn lasers on Si operating up to 100 K
Yiyin Zhou, Yuanhao Miao, Solomon Ojo +14
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many…