Improved Buildup Model for Radiation-Induced Defects in MOSFET Isolation Oxides

Hesham. H. Shaker, A. A. Saleh, Mohamed Refky Amin +1

Ionizing radiation induces defects in STI oxides in current MOSFETs. These defects may degrade the performance of the MOS circuit. Analytical models for the buildup of these defect…