166 citations · 304 across the 6 of their papers we have counts for
6 papers
Exploring In(SeTe) alloys as photovoltaic materials
Wei Li, Xuefen Cai, Nicholas Valdes +4
InSe in the three-dimensional (3D) hexagonal crystal structure with space group (-InSe) has a direct band gap of 1.8 eV and high absorption coeffici…
Velocity Saturation in La-doped BaSnO3 Thin Films
Hareesh Chandrasekar, Junao Cheng, Tianshi Wang +11
BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properti…
Band gap and band offset of GaO and (AlGa)O alloys
Tianshi Wang, Wei Li, Chaoying Ni +1
GaO and (AlGa)O alloys are promising materials for solar-blind UV photodetectors and high-power transistors. Basic key parameters in the device design,…
Large Disparity Between Optical and Fundamental Band Gaps in Layered In2Se3
Wei Li, Fernando P. Sabino, Felipe Crasto de Lima +3
InSe is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse…
Microstructural Characteristics of Reaction-Bonded B4C/SiC Composite
Tianshi Wang, Chaoying Ni, Prashant Karandikar
A detailed microstructural investigation was performed to understand structural characteristics of a reaction-bonded BC/SiC ceramic composite. The state-of-the-art focused ion…
Thermal Transport Across Metal Silicide-Silicon Interfaces: An Experimental Comparison between Epitaxial and Non-epitaxial Interfaces
Ning Ye, Joseph P Feser, Sridhar Sadasivam +4
Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work,…