4 papers
Exploring In(SeTe) alloys as photovoltaic materials
Wei Li, Xuefen Cai, Nicholas Valdes +4
InSe in the three-dimensional (3D) hexagonal crystal structure with space group (-InSe) has a direct band gap of 1.8 eV and high absorption coeffici…
Band gap evolution in Ruddlesden-Popper phases
Wei Li, Shanyuan Niu, Boyang Zhao +3
We investigate the variation of the band gap across the Ruddlesden-Popper (RP) series (An+1BnX3n+1) in model chalcogenide, oxide, and halide materials to understand the factors inf…
Band gap and band offset of GaO and (AlGa)O alloys
Tianshi Wang, Wei Li, Chaoying Ni +1
GaO and (AlGa)O alloys are promising materials for solar-blind UV photodetectors and high-power transistors. Basic key parameters in the device design,…
Large Disparity Between Optical and Fundamental Band Gaps in Layered In2Se3
Wei Li, Fernando P. Sabino, Felipe Crasto de Lima +3
InSe is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse…