activity
20182025
most citedBand gap and band offset of GaO and (AlGa)O alloys

166 citations · 328 across the 6 of their papers we have counts for

collaborators

6 papers

physics.optics2025★ 41 cited

Structural phase transitions between layered Indium Selenide for inte-grated photonic memory

Tiantian Li, Yong Wang, Wei Li +10

The primary mechanism of optical memristive devices relies on the phase transitions between amorphous-crystalline states. The slow or energy hungry amorphous-crystalline transition…

cond-mat.mtrl-sci2020

Exploring In(SeTe) alloys as photovoltaic materials

Wei Li, Xuefen Cai, Nicholas Valdes +4

InSe in the three-dimensional (3D) hexagonal crystal structure with space group (-InSe) has a direct band gap of 1.8 eV and high absorption coeffici…

cond-mat.mtrl-sci2020★ 2 cited

Predicting band gaps and band-edge positions of oxide perovskites using DFT and machine learning

Wei Li, Zigeng Wang, Xia Xiao +4

Density functional theory within the local or semilocal density approximations (DFT-LDA/GGA) has become a workhorse in electronic structure theory of solids, being extremely fast a…

cond-mat.mtrl-sci2019★ 47 cited

Band gap evolution in Ruddlesden-Popper phases

Wei Li, Shanyuan Niu, Boyang Zhao +3

We investigate the variation of the band gap across the Ruddlesden-Popper (RP) series (An+1BnX3n+1) in model chalcogenide, oxide, and halide materials to understand the factors inf…

cond-mat.mtrl-sci2018★ 166 cited

Band gap and band offset of GaO and (AlGa)O alloys

Tianshi Wang, Wei Li, Chaoying Ni +1

GaO and (AlGa)O alloys are promising materials for solar-blind UV photodetectors and high-power transistors. Basic key parameters in the device design,…

cond-mat.mtrl-sci2018★ 72 cited

Large Disparity Between Optical and Fundamental Band Gaps in Layered In2Se3

Wei Li, Fernando P. Sabino, Felipe Crasto de Lima +3

InSe is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse…