2 papers
physics.chem-ph2025
Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC
Yamina Benamra, Laurent Auvray, Jérôme Andrieux +7
Heteroepitaxial boron carbide (BxC) can be grown on Si face 4H-SiC(0001) using a two-step process involving substrate boridation at 1200C under BCl3 + H2 followed by a chem…
cond-mat.mtrl-sci2024
Erbium doped yttrium oxide thin films grown by chemical vapour deposition for quantum technologies
Anna Blin, Alexander Kolar, Andrew Kamen +8
The obtention of quantum-grade rare-earth doped oxide thin films that can be integrated with optical cavities and microwave resonators is of great interest for the development of s…