3 papers
physics.chem-ph2025
Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC
Yamina Benamra, Laurent Auvray, Jérôme Andrieux +7
Heteroepitaxial boron carbide (BxC) can be grown on Si face 4H-SiC(0001) using a two-step process involving substrate boridation at 1200C under BCl3 + H2 followed by a chem…
cond-mat.mtrl-sci2024
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
François Cauwet, Yamina Benamra, Laurent Auvray +2
The chemical vapor deposition (CVD) growth of boron carbide (B x C) layers on 4H-SiC, 4{\textdegree}off substrates was studied. Depending on the polarity of the substrate, differen…
cond-mat.mtrl-sci2024
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
Yann Jousseaume, Piyush Kumar, Marianne Etzelmüller Bathen +3
Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4{\textdegree}off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading dif…