UV photodetectors and field-effect transistors based on ${\hat{I}}^2$-Ga${}_2$O${}_3$ nanomembranes produced by ion-beam-assisted exfoliation

Miguel Cardoso Pedro, Duarte Magalhães Esteves, Daniela Rodrigues Pereira +4

${\hat{I}}^2$-Ga${}_2$O${}_3$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as…